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| LESHAN RADIO COMPANY, LTD. Silicon Pin Diode These devices are designed primarily for VHF band switching applications but are also suitable for use in general-purpose switching circuits. They are supplied in a cost-effective plastic package for economical, high-volume consumer and industrial requirements. They are also available in surface mount. * Long Reverse Recovery Time t rr = 300 ns (Typ) * Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability * Low Series Resistance @ 100 MHz -- R S = 0.7 Ohms (Typ) @ I F = 10 mAdc * Reverse Breakdown Voltage = 200 V (Min) MMBV3700LT1 SILICON PIN SWITCHING DIODE 3 1 2 3 CATHODE 1 ANODE CASE 318-08, STYLE8 SOT- 23 (TO-236AB) MAXIMUM RATINGS(EACH DIODE) Rating Reverse Voltage Device Dissipation @T A = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR PD TJ T stg MV21XX MMBV21XXLT1 200 280 200 2.8 2.0 +150 -55 to +150 Unit Vdc mW mW/C C C DEVICE MARKING MMBV3700LT1=4R ELECTRICAL CHARACTERISTICS(TA=25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR=10Adc) Diode Capacitance (V R=20 Vdc,f=1.0MHz) Series Resistance(figure5) (IF=10mAdc) Reverse Leakage Current (V R=150Vdc) Reverse Recovery Time (IF=IR=10mAdc) Symbol V (BR)R CT RS I R Min 200 -- -- -- -- Typ -- -- 0.7 -- 300 Max -- 1.0 1.0 0.1 -- Unit Vdc pF Adc ns t rr I9-1/2 LESHAN RADIO COMPANY, LTD. MMBV3700LT1 MPN3700 TYPICAL CHARACTERISTICS R S , SERIES RESISTANCE ( OHMS) 3.2 800 I F , FORWARD CURRENT ( mA ) 2.8 700 600 500 400 300 200 100 0 0.7 0.8 0.9 1.0 TA = 25C 2.4 2.0 1.6 1.2 0.8 0.4 0 0 2.0 4.0 6.0 8.0 10 12 14 16 TA = 25C I F , FORWARD CURRENT ( mA ) V F , FORWARD VOLTAGE ( VOLTS ) Figure 1. Series Resistance Figure 2. Forward Voltage C T , DIODE CAPACITANDE ( pF ) 10 8.0 6.0 100 40 I R, REVERSE CURRENT (A) 4.0 2.0 1.0 0.8 0.6 0.4 0.2 0.1 0 - 10 - 20 - 30 - 40 - 50 10 4.0 1.0 0.4 0.1 0.04 0.01 0.004 0.001 - 60 - 20 0 +20 +60 +100 +140 T A = 25C V R= 25Vdc V R , FORWARD VOLTAGE ( VOLTS ) T A , AMBIENT TEMPERATURE (C) Figure 3. Diode Capacitance Figure 4. Leakage Current I9-2/2 |
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